دورية أكاديمية
The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics
| العنوان: | The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics |
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| المؤلفون: | Martinez, Antonio, Kalna, Karol, Aldegunde, Manuel |
| المصدر: | MRS Proceedings ; volume 1550 ; ISSN 0272-9172 1946-4274 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 2013 |
| الوصف: | Dissipative quantum transport simulations using the Non-Equilibrium Green Function Formalism have been carried out to obtain a transfer characteristic of a Si gate-all-around (GAA) nanowire transistor. A donor-type impurity has been located close to the source/channel interface, creating a resonant level. The existence and energy of the resonant level depends on the value of the gate bias. The dependence of the current reduction due to phonon scattering as a function of the gate bias, has a minimum due to the resonant level. The simulations at different temperatures have shown a decline in the sub-threshold slope at high temperature and an improvement at low temperature. Finally, the sub-threshold slope approximate follows the standard linear temperature dependence. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/opl.2013.639 |
| الإتاحة: | https://doi.org/10.1557/opl.2013.639Test https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427413006398Test |
| حقوق: | https://www.cambridge.org/core/termsTest |
| رقم الانضمام: | edsbas.9D57A78C |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/opl.2013.639 |
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