التفاصيل البيبلوغرافية
| العنوان: |
Non-contact mobility measurements of graphene on silicon carbide. |
| المؤلفون: |
Whelan, Patrick R.1 (AUTHOR) patwhe@nanotech.dtu.dk, Zhao, Xiaojing1 (AUTHOR), Pasternak, Iwona1 (AUTHOR), Strupinski, Wlodek1 (AUTHOR), Jepsen, Peter U.1 (AUTHOR), Bøggild, Peter1 (AUTHOR) peter.boggild@nanotech.dtu.dk |
| المصدر: |
Microelectronic Engineering. May2019, Vol. 212, p9-12. 4p. |
| مصطلحات موضوعية: |
*TERAHERTZ time-domain spectroscopy, *SILICON carbide, *CARRIER density, *CHARGE carrier mobility, *THIN films, *SPEED measurements |
| مستخلص: |
Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples. Unlabelled Image • THz-TDS provides non-contact measurement of the frequency dependent conductivity of thin films. • Carrier density and mobility of graphene on silicon carbide can be spatially mapped from THz-TDS. • Carrier density and mobility extracted from THz-TDS agree well with values determined by conventional Hall measurements. • The agreement between THz-TDS and Hall measurements is best for homogeneously conducting samples. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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