التفاصيل البيبلوغرافية
| العنوان: |
Surface photovoltage measurements for Cu, Ti and W determination in Si wafers |
| المؤلفون: |
Cali, D., Camalleri, C.M., Raineri, V. |
| المصدر: |
Materials Science in Semiconductor Processing; February 2001, Vol. 4 Issue: 1-3 p19-22, 4p |
| مستخلص: |
p-type (100) Cz silicon wafers were contaminated with Cu, W, and Ti in the dose range of 5×109–1×1014cm−2by ion implantation. Surface photovoltage measurements were used to detect the metal impurities after annealing. Fast and slow cooling have been used and calibration curves have been obtained in all cases. Higher sensitivity has been determined for slow cooling (Cu and W) or fast cooling (Ti) depending if deep levels are associated with substitutional (Cu and W) or interstitial (Ti) position. |
| قاعدة البيانات: |
Supplemental Index |
