دورية أكاديمية
Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
| العنوان: | Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging? |
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| المؤلفون: | Takashi Ando |
| المصدر: | Materials, Vol 5, Iss 3, Pp 478-500 (2012) |
| بيانات النشر: | MDPI AG, 2012. |
| سنة النشر: | 2012 |
| المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
| مصطلحات موضوعية: | high-κ, metal gate, scavenging, higher-κ, EOT, MOSFET, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
| الوصف: | Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of high-κ gate dielectrics via higher-κ ( > 20) materials and interfacial layer (IL) scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm), but with effective workfunction (EWF) values suitable only for n-type field-effect-transistor (FET). Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL) is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm) will be the key technology to satisfy both performance and reliability requirements for future CMOS devices. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1996-1944 |
| العلاقة: | http://www.mdpi.com/1996-1944/5/3/478Test/; https://doaj.org/toc/1996-1944Test |
| DOI: | 10.3390/ma5030478 |
| الوصول الحر: | https://doaj.org/article/118a92f0ce4e45c09b0bb0ce6d3c3929Test |
| رقم الانضمام: | edsdoj.118a92f0ce4e45c09b0bb0ce6d3c3929 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19961944 |
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| DOI: | 10.3390/ma5030478 |