-
1دورية أكاديمية
المؤلفون: Yongjie He, Feiyang Zhao, Bin Huang, Tianyi Zhang, Hao Zhu
المصدر: Materials, Vol 17, Iss 8, p 1870 (2024)
مصطلحات موضوعية: β-Ga2O3, Schottky barrier diodes (SBDs), heterojunction diodes (HJDs), power devices, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
-
2
المؤلفون: Jing Liu, Chien Yu Li, Min Yu Cheng, Cheng Fu Yang, Mau-Phon Houng
المصدر: Materials
Materials; Volume 11; Issue 1; Pages: 90
Materials, Vol 11, Iss 1, p 90 (2018)مصطلحات موضوعية: Materials science, Silicon, Schottky barrier, Schottky barrier diodes, hydrogen plasma, guard ring, atomic layer deposition, rapid thermal annealing, chemistry.chemical_element, 02 engineering and technology, lcsh:Technology, 01 natural sciences, Article, Atomic layer deposition, Reverse leakage current, 0103 physical sciences, Breakdown voltage, General Materials Science, lcsh:Microscopy, lcsh:QC120-168.85, Diode, 010302 applied physics, lcsh:QH201-278.5, lcsh:T, business.industry, Schottky diode, SBDS, 021001 nanoscience & nanotechnology, chemistry, lcsh:TA1-2040, Optoelectronics, lcsh:Descriptive and experimental mechanics, lcsh:Electrical engineering. Electronics. Nuclear engineering, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:TK1-9971
وصف الملف: application/pdf
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cbf145cde63811651d6475e9a1d1cc5Test
https://doi.org/10.3390/ma11010090Test