التفاصيل البيبلوغرافية
| العنوان: |
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. |
| المؤلفون: |
Aldegunde, Manuel, García-Loureiro, Antonio J., Kalna, Karol |
| المصدر: |
Large-scale Scientific Computing (9783540788256); 2008, p115-122, 8p |
| مستخلص: |
A parallel 3D Monte Carlo simulator for the modelling of electron transport in nano-MOSFETs using the Finite Element Method to solve Poisson equation is presented. The solver is parallelised using a domain decomposition strategy, whereas the MC is parallelised using an approach based on the distribution of the particles among processors. We have obtained a very good scalability thanks to the Finite Element solver, the most computationally intensive stage in self-consistent simulations. The parallel simulator has been tested by modelling the electron transport at equilibrium in a 4 nm gate length double gate MOSFET. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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