المؤلفون: Liu, Chengfang, Lin, He, Ji, Dongzhou, Yu, Qun, Chen, Shuoguo, Guo, Ziming, Luo, Qian, Liu, Xu, Lai, Wenyong

المصدر: Journal of Semiconductors; 3/1/2023, Vol. 44 Issue 3, p1-8, 8p

المؤلفون: Yu Qi, Zhao Di, Luo Qian, Tan Kaizhou, Cui Wei, Wang Xiangzhan

المصدر: Journal of Semiconductors. 36:014010

مصطلحات موضوعية: Materials science, business.industry, Transistor, Semiconductor device, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, Stress (mechanics), CMOS, law, Trench, Ultimate tensile strength, MOSFET, Materials Chemistry, Electronic engineering, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::131e6affc656fb1f7d9d3cbe06f243b5Test
https://doi.org/10.1088/1674-4926/36/1/014010Test

المؤلفون: Du Jiangfeng, Yang Mohua, Xia Jianxin, Lu Shenghui, Luo Qian, Zhou Wei, Yu Qi

المصدر: Journal of Semiconductors. 31:094004

مصطلحات موضوعية: Materials science, business.industry, Algan gan, Insulator (electricity), Condensed Matter Physics, Gate voltage, Heterostructure field effect transistors, Electronic, Optical and Magnetic Materials, Barrier layer, Saturation voltage, Charge control, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Fermi gas

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::c8158624836ff571f4d85a2343321b6aTest
https://doi.org/10.1088/1674-4926/31/9/094004Test

المؤلفون: Zhao Di, Luo Qian, Wang Xiangzhan, Yu Qi, Cui Wei, Tan Kaizhou

المصدر: Journal of Semiconductors; Jan2015, Vol. 36 Issue 1, p1-1, 1p