التفاصيل البيبلوغرافية
| العنوان: |
Growth and Characterization of Totally Relaxed InGaAs Thick Layers on Strain-Relaxed Paramorphic InP Substrates. |
| المؤلفون: |
Boudaa, Mouloud, Regreny, P., Leclercq, J. L., Besland, M. P., Marty, O., Hollinger, G. |
| المصدر: |
Journal of Electronic Materials; Jul2004, Vol. 33 Issue 7, p833-839, 7p, 7 Diagrams, 1 Chart, 2 Graphs |
| مصطلحات موضوعية: |
BILAYER lipid membranes, ATOMIC force microscopy, TRANSMISSION electron microscopy, PHOTOLUMINESCENCE, METALLIC films, MICROELECTRONICS, EPITAXY |
| مستخلص: |
In this paper, we present a technological process that can be used to prepare strain-relaxed InAsP/InGaAs bilayer membranes, 0.8% lattice mismatched to InP substrates, with diameters up to 300 µm. It is shown that high-quality thick In0.65Ga0.35As layers can be grown fully relaxed on these membranes, without any structural defect, as demonstrated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) characterizations. The critical thickness of InAs layers grown on InAs0.25P0.75 templates is enhanced from 15Å to 60 Å when compared to InP substrates. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
