التفاصيل البيبلوغرافية
| العنوان: |
Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices |
| المؤلفون: |
Huggenberger, A. alexander.huggenberger@physik.uni-wuerzburg.de, Schneider, C.1, Drescher, C.1, Heckelmann, S.1, Heindel, T.1, Reitzenstein, S1, Kamp, M.1, Höfling, S.1, Worschech, L.1, Forchel, A.1 |
| المصدر: |
Journal of Crystal Growth. May2011, Vol. 323 Issue 1, p194-197. 4p. |
| مصطلحات موضوعية: |
*QUANTUM dots, *MOLECULAR beam epitaxy, *CRYSTAL growth, *NUCLEATION, *SPECTRAL line broadening, *ELECTROLUMINESCENCE, *OPTICAL properties of semiconductors, *NANOSTRUCTURED materials |
| مستخلص: |
Abstract: We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545°C during growth ensures optimal SCQD nucleation on square arrays from 200nm up to 10μm period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p–i–n diode and observe electroluminescence of a single SCQD with a linewidth of 400μeV. [Copyright &y& Elsevier] |
| قاعدة البيانات: |
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