التفاصيل البيبلوغرافية
| العنوان: |
Theory of electronic transport in noncrystalline junctions. |
| المؤلفون: |
Nardone, M.1, Karpov, V. G.1, Shvydka, D.2, Attygalle, M. L. C.3 |
| المصدر: |
Journal of Applied Physics. Oct2009, Vol. 106 Issue 7, p074503-1-074503-9. 9p. 6 Diagrams, 6 Graphs. |
| مصطلحات موضوعية: |
*SEMICONDUCTOR junctions, *HOPPING conduction, *THIN film devices, *AMORPHOUS semiconductors, *TRANSPORT theory |
| مستخلص: |
A theory of electronic transport in noncrystalline junctions is developed and compared to the experimental data. Junction transport is represented as hopping in both real space and energy space, which is dominated by rare yet exponentially effective optimum channels representing favorable configurations of localized states. Our work correlates the current-voltage characteristics of noncrystalline, thin-film devices with material parameters and predicts large ideality factors that increase under light and depend on applied bias. Also, the frequently observed variations in efficiency and degradation between nominally identical devices are a natural consequence of the theory. The theory is shown to be in good qualitative agreement with our measurements extracted from a large set of experimental data on thin-film cadmium telluride/cadmium sulfide solar cells. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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