Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment

التفاصيل البيبلوغرافية
العنوان: Reduction of Contact Resistivity between Al Alloy Layer and Indium Tin Oxide Layer by Fluorine Plasma Treatment
المؤلفون: Jae-Cheol Park, Ho-Nyeon Lee, Won-Geon Lee
المصدر: Japanese Journal of Applied Physics. 41:L412-L414
بيانات النشر: IOP Publishing, 2002.
سنة النشر: 2002
مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Alloy, Inorganic chemistry, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Plasma, engineering.material, Neodymium, Indium tin oxide, chemistry, Electrical resistivity and conductivity, Aluminium, engineering, Fluorine, Layer (electronics)
الوصف: The effect of fluorine plasma treatment on an aluminum and neodymium alloy (Al–Nd) layer has been studied. The fluorine plasma replaces Al–O bonds with Al–F bonds on the surface of Al–Nd. The layer of Al–F bonds is preserved even if an indium tin oxide (ITO) layer is deposited on it. This layer prohibits the interfacial reaction from producing an AlOx layer between ITO and Al–Nd. The contact resistivity between ITO and Al–Nd is reduced to about 100 µΩcm2 by this fluorine plasma treatment.
تدمد: 0021-4922
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::571f3f7b56a5f1a60908957c211047e7Test
https://doi.org/10.1143/jjap.41.l412Test
رقم الانضمام: edsair.doi...........571f3f7b56a5f1a60908957c211047e7
قاعدة البيانات: OpenAIRE