Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
| العنوان: | Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC |
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| المؤلفون: | Hirokatsu Yashiro, Kozo Onoue, Takeshi Nishikawa, Masakazu Katsuno, Masatoshi Kanaya, Noboru Ohtani |
| المصدر: | Japanese Journal of Applied Physics. 35:2240 |
| بيانات النشر: | IOP Publishing, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Kinetics, Inorganic chemistry, Doping, General Engineering, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Nitrogen, stomatognathic system, chemistry, Normal growth, Sublimation (phase transition), Growth rate, Polarite, Single crystal |
| الوصف: | Nitrogen incorporation kinetics during the sublimation boule growth of SiC have been studied in terms of several growth parameters. 6H and 4H SiC crystals were heavily doped with nitrogen as a donor. It was found that the growth rate has little influence on the doping concentration, indicating that nitrogen incorporation is not kinetically limited at normal growth rates in the sublimation growth. On the other hand, surface polarity and polytype were found to influence the nitrogen incorporation kinetics at the growth front. By optimizing the growth conditions, bulk resistivities as low as 7.6×10-3 Ω cm and 5.3×10-3 Ω cm were obtained for 6H and 4H SiC, respectively. |
| تدمد: | 1347-4065 0021-4922 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::176f7b8f8717f54e263f12f0f1aba6bcTest https://doi.org/10.1143/jjap.35.2240Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........176f7b8f8717f54e263f12f0f1aba6bc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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