دورية أكاديمية

Effect of Water Vapor on Oxidation Processes of the Cu(111) Surface and Sublayer.

التفاصيل البيبلوغرافية
العنوان: Effect of Water Vapor on Oxidation Processes of the Cu(111) Surface and Sublayer.
المؤلفون: Kim, Young Jae1,2 (AUTHOR), Kim, Daeho1,2 (AUTHOR), Kim, Yongman1,2 (AUTHOR), Jeong, Yongchan2 (AUTHOR), Jeong, Beomgyun3 (AUTHOR), Park, Jeong Young1,2 (AUTHOR) jeongypark@kaist.ac.kr
المصدر: International Journal of Molecular Sciences. Jan2023, Vol. 24 Issue 1, p810. 13p.
مصطلحات موضوعية: *OXIDATION of water, *SCANNING tunneling microscopy, *X-ray photoelectron spectroscopy, *SURFACE diffusion, *GAS mixtures, *OXIDATION states, *WATER vapor
مستخلص: Copper-based catalysts have different catalytic properties depending on the oxidation states of Cu. We report operando observations of the Cu(111) oxidation processes using near-ambient pressure scanning tunneling microscopy (NAP-STM) and near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS). The Cu(111) surface was chemically inactive to water vapor, but only physisorption of water molecules was observed by NAP-STM. Under O2 environments, dry oxidation started at the step edges and proceeded to the terraces as a Cu2O phase. Humid oxidation of the H2O/O2 gas mixture was also promoted at the step edges to the terraces. After the Cu2O covered the surface under humid conditions, hydroxides and adsorbed water layers formed. NAP-STM observations showed that Cu2O was generated at lower steps in dry oxidation with independent terrace oxidations, whereas Cu2O was generated at upper steps in humid oxidation. The difference in the oxidation mechanisms was caused by water molecules. When the surface was entirely oxidized, the diffusion of Cu and O atoms with a reconstruction of the Cu2O structures induced additional subsurface oxidation. NAP-XPS measurements showed that the Cu2O thickness in dry oxidation was greater than that in humid oxidation under all pressure conditions. [ABSTRACT FROM AUTHOR]
قاعدة البيانات: Academic Search Index
الوصف
تدمد:16616596
DOI:10.3390/ijms24010810