γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device
| العنوان: | γ-Ray Radiation Effects on an HfO2-Based Resistive Memory Device |
|---|---|
| المؤلفون: | Qi Yu, Qi Guo, Yang Liu, L. J. Deng, Zhang Xingyao, Yu-dong Li, Tupei Chen, You Yin, Sumio Hosaka, S. G. Hu |
| المساهمون: | School of Electrical and Electronic Engineering |
| المصدر: | IEEE Transactions on Nanotechnology. 17:61-64 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Electrical engineering, Gamma ray, γ Ray, 02 engineering and technology, Radiation, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science Applications, Resistive random-access memory, Ionizing radiation, Absorbed dose, 0103 physical sciences, Electrode, Electrical and electronic engineering [Engineering], Optoelectronics, Irradiation, Electrical and Electronic Engineering, Hafnium Oxide, 0210 nano-technology, business, Voltage |
| الوصف: | In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability. |
| تدمد: | 1941-0085 1536-125X |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55c231243b13693cacdd8f91f434c28aTest https://doi.org/10.1109/tnano.2017.2661818Test |
| حقوق: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....55c231243b13693cacdd8f91f434c28a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19410085 1536125X |
|---|