التفاصيل البيبلوغرافية
| العنوان: |
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. |
| المؤلفون: |
Dang, Kui, Zhang, Jincheng, Zhou, Hong, Yin, Shan, Zhang, Tao, Ning, Jing, Zhang, Yachao, Bian, Zhaoke, Chen, Jiabo, Duan, Xiaoling, Zhao, Shenglei, Hao, Yue |
| المصدر: |
IEEE Transactions on Industrial Electronics; Aug2020, Vol. 67 Issue 8, p6597-6606, 10p |
| مصطلحات موضوعية: |
SCHOTTKY barrier diodes, WIRELESS power transmission, GALLIUM nitride, SHORTWAVE radio, TWO-dimensional electron gas, LIGHT emitting diodes, RADIO frequency, PHOTOVOLTAIC power systems |
| مستخلص: |
In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility, and saturation velocity of the gallium nitride (GaN) two-dimensional electron gas, engineered lateral GaN SBD with low turn-on voltage (Von) of 0.47 V, on-resistance (Ron) of 4 Ω, breakdown voltage of 170 V, and junction capacitance $(C_{j})$ of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high-performance GaN SBD into the optimized rectifier circuit, high radio frequency (RF)/dc conversion efficiency of 79% is achieved, and the input power of per single GaN SBD is increased by 10X when compared with that of a commercially available silicon (Si) SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 light emitting diodes lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy-harvesting technique for future WPT application. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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