نتائج البحث

1

A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

المؤلفون: F. Buscemi, E. Piccinini, L. Vandelli, F. Nardi, A. Padovani, B. Kaczer, D. Garbin, S. Clima, R. Degraeve, G. S. Kar, F. Tavanti, A. Slassi, A. Calzolari, L. Larcher

المصدر: IEEE Transactions on Electron Devices. 70:1808-1814

مصطلحات موضوعية: Mathematical models, Germanium, Switches, Performance evaluation, Material properties, Hydrodynamics, Electron traps, Hydrodynamic, ovonic, ovonic threshold switching (OTS), trap-assisted-tunneling, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a532901c7769b6491accc046706e7cc2Test
https://doi.org/10.1109/ted.2023.3242229Test

2

A Physics-Based Compact Model for Silicon Cold-Source Transistors

المؤلفون: Anirban Kar, Keshari Nandan, Yogesh Singh Chauhan

المصدر: IEEE Transactions on Electron Devices. 70:1580-1588

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::e5bef6dda42736bf86d070bb189b8652Test
https://doi.org/10.1109/ted.2023.3247549Test

3

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

المؤلفون: Zeyu Hu, Weidong Zhang, Robin Degraeve, Daniele Garbin, Zheng Chai, Nishant Saxena, Pedro Freitas, Andrea Fantini, Taras Ravsher, Sergiu Clima, Jian Fu Zhang, Romain Delhougne, Ludovic Goux, Gouri Kar

المصدر: IEEE Transactions on Electron Devices. 70:812-818

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::0ea49795b3efd92cf2d84ff44c65c1e0Test
https://doi.org/10.1109/ted.2022.3231233Test

4

Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS

المؤلفون: Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan

المصدر: IEEE Transactions on Electron Devices. :1-8

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::5c2fce8eaac00a1f77d1a3535f849edaTest
https://doi.org/10.1109/ted.2023.3262613Test

5

Exploration of Scandium Doping in SbTe for Phase Change Memory Application

المؤلفون: Marinela Barci, Daniele Leonelli, Xue Zhou, Xiaojie Wang, Daniele Garbin, Ganesh Jayakumar, Thomas Witters, Nathali Franchina Vergel, Shreya Kundu, Senthil Vadakupudhu Palayam, Huifang Jiao, Hao Wu, Gouri Sankar Kar

المصدر: IEEE Transactions on Electron Devices. 69:6106-6112

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::2952431da5b6b647d28170139913fc73Test
https://doi.org/10.1109/ted.2022.3209639Test

6

Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors

المؤلفون: Amey M. Walke, Mihaela I. Popovici, Kaustuv Banerjee, Sergiu Clima, Pankaj Kumbhare, Johan Desmet, Johan Meersschaut, Geert Van den Bosch, Romain Delhougne, Gouri Sankar Kar, Jan Van Houdt

المصدر: IEEE Transactions on Electron Devices. 69:4744-4749

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::74f67335c41f4c699e395013f4b26adfTest
https://doi.org/10.1109/ted.2022.3186869Test

7

دورية

Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

المؤلفون: Tang, Hongwei, Dekkers, Harold, Rassoul, Nouredine, Sutar, Surajit, Subhechha, Subhali, Afanas'ev, Valeri, Van Houdt, Jan, Delhougne, Romain, Kar, Gouri Sankar, Belmonte, Attilio

المصدر: IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p567-573, 7p

8

دورية

Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS

المؤلفون: Kar, Anirban, Parihar, Shivendra Singh, Huang, Jun Z., Zhang, Huilong, Wang, Weike, Imura, Kimihiko, Chauhan, Yogesh Singh

المصدر: IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p62-69, 8p

9

دورية

The Impact of IGZO Channel Composition on DRAM Transistor Performance

المؤلفون: Kruv, Anastasiia, Van Setten, M. J., Dekkers, Hendrik F. W., Lorant, Christophe, Verreck, Devin, Smets, Quentin, Venkataramana, Bhuvaneshwari Yengula, Belmonte, Attilio, Subhechha, Subhali, Chasin, Adrian Vaisman, Delhougne, Romain, Kar, Gouri Sankar

المصدر: IEEE Transactions on Electron Devices; September 2023, Vol. 70 Issue: 9 p4674-4679, 6p

10

دورية

Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application

المؤلفون: Kumar, Ankit, Degraeve, Robin, Beckers, Arthur, Fantini, Andrea, Verbauwhede, Ingrid, Linten, Dimitri, Kar, Gouri S.

المصدر: IEEE Transactions on Electron Devices; August 2023, Vol. 70 Issue: 8 p4170-4177, 8p

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