Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights
| العنوان: | Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights |
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| المؤلفون: | Shiyong Zhang, Xiaodong Tong, Feng-Xiang Chen, Jianxing Xu, Rong Wang, Penghui Zheng |
| المصدر: | IEEE Transactions on Electron Devices. 66:5091-5096 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Amplifier, Gallium nitride, Integrated circuit, Noise figure, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, chemistry.chemical_compound, chemistry, law, 0103 physical sciences, Continuous wave, Optoelectronics, Ka band, Electrical and Electronic Engineering, business, Monolithic microwave integrated circuit, Microwave |
| الوصف: | A 23–30-GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise figure (NF) of 0.87–1.51 dB is presented in this article. This LNA was fabricated with 100-nm gate-length GaN-on-silicon (GaN/Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14–17 dB within the band. For investigating the robustness of this LNA, 1-W continuous wave (CW) at 27 GHz was stressed on the input port of the LNA. The gain decreased, and the NF increased after stress. Experimental research and first-principles calculations were carried out to investigate the physical origin of the degradation. The dehydrogenation of $\text{V}_{{\text {Ga}}}$ -H3 complexes causes the decrease of gain, and the creation of $\text{V}_{{\text {Al}}}$ -H4 in the AlN barrier is supposed to cause an increase of NF. |
| تدمد: | 1557-9646 0018-9383 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::cfefeaf7f09a08d53194ee61f4f0f33dTest https://doi.org/10.1109/ted.2019.2947311Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........cfefeaf7f09a08d53194ee61f4f0f33d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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