نتائج البحث - "Cheng, Kai"

1

دورية

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

المؤلفون: Wang, Yifan, Porter, Matthew, Xiao, Ming, Lu, Albert, Yee, Nathan, Kravchenko, Ivan, Srijanto, Bernadeta, Cheng, Kai, Wong, Hiu Yung, Zhang, Yuhao

المصدر: IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 3 p1481-1487, 7p

2

دورية

High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension

المؤلفون: Cui, Jiawei, Wu, Yanlin, Yang, Junjie, Yu, Jingjing, Li, Teng, Liu, Xiaosen, Cheng, Kai, Yang, Xuelin, Hao, Yilong, Wang, Jinyan, Shen, Bo, Wang, Maojun, Wei, Jin

المصدر: IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 3 p1592-1597, 6p

3

دورية

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

المؤلفون: Li, Yanjun, Yang, Shu, Liu, Kai, Cheng, Kai, Sheng, Kuang, Shen, Bo

المصدر: IEEE Transactions on Electron Devices; February 2023, Vol. 70 Issue: 2 p619-626, 8p

4

دورية أكاديمية

The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure.

المؤلفون: Zhu, Liyang, Zhou, Qi, Chen, Kuangli, Gao, Wei, Cai, Yong, Cheng, Kai, Li, Zhaoji, Zhang, Bo

المصدر: IEEE Transactions on Electron Devices; Sep2022, Vol. 69 Issue 9, p4828-4834, 7p

مصطلحات موضوعية: PASSIVATION, STOICHIOMETRY, GALLIUM nitride, CHEMICAL vapor deposition, X-ray photoelectron spectroscopy, WIDE gap semiconductors, ELECTRON gas

5

دورية أكاديمية

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering.

المؤلفون: Zhou, Guangnan, Zeng, Fanming, Gao, Rongyu, Wang, Qing, Cheng, Kai, Li, Lingqi, Xiang, Peng, Du, Fangzhou, Xia, Guangrui, Yu, Hongyu

المصدر: IEEE Transactions on Electron Devices; May2022, Vol. 69 Issue 5, p2282-2286, 5p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, THRESHOLD voltage, CHEMICAL engineering, CHEMICAL vapor deposition, STRAY currents, BREAKDOWN voltage, ENGINEERING, ELECTRIC breakdown

6

دورية أكاديمية

Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV.

المؤلفون: Wu, Yinhe, Zhang, Weihang, Zhang, Jincheng, Zhao, Shenglei, Luo, Jun, Tan, Xiaohong, Mao, Wei, Zhang, Chunfu, Zhang, Yachao, Cheng, Kai, Liu, Zhihong, Hao, Yue

المصدر: IEEE Transactions on Electron Devices; Sep2021, Vol. 68 Issue 9, p4543-4549, 7p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, COMPLEMENTARY metal oxide semiconductors, EPITAXIAL layers, WIDE gap semiconductors, BREAKDOWN voltage, ALUMINUM gallium nitride, SILICON

7

دورية أكاديمية

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity.

المؤلفون: Lu, Hao, Hou, Bin, Yang, Ling, Niu, Xuerui, Si, Zeyan, Zhang, Meng, Wu, Mei, Mi, Minhan, Zhu, Qing, Cheng, Kai, Ma, Xiaohua, Hao, Yue

المصدر: IEEE Transactions on Electron Devices; Jul2021, Vol. 68 Issue 7, p3308-3313, 6p

مصطلحات موضوعية: GALLIUM nitride, TRANSISTORS, MODULATION-doped field-effect transistors, FREQUENCIES of oscillating systems

8

دورية أكاديمية

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current.

المؤلفون: Jiang, Huaxing, Lyu, Qifeng, Zhu, Renqiang, Xiang, Peng, Cheng, Kai, Lau, Kei May

المصدر: IEEE Transactions on Electron Devices; Feb2021, Vol. 68 Issue 2, p653-657, 5p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, METAL semiconductor field-effect transistors, BREAKDOWN voltage, SURFACE passivation, ELECTRON gas, THRESHOLD voltage

9

دورية أكاديمية

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT.

المؤلفون: Qi, Yongle, Zhu, Yumeng, Lin, Xinpeng, Jiang, Lingli, Yu, Hongyu, Zhang, Jiang, Cheng, Kai

المصدر: IEEE Transactions on Electron Devices; May2018, Vol. 65 Issue 5, p1759-1764, 6p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, CHEMICAL vapor deposition, SILICON nitride, ALUMINUM gallium nitride, GALLIUM nitride, DIELECTRIC breakdown, ELECTRIC potential

10

دورية أكاديمية

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs.

المؤلفون: Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Srivastava, Puneet, Marcon, Denis, Das, Jo, Leys, Maarten Reinier, Degroote, Stefan, Cheng, Kai, Vandenplas, Erwin, Germain, Marianne, Borghs, Gustaaf

المصدر: IEEE Transactions on Electron Devices; 12/01/2010, Vol. 57 Issue 12, p3333-3339, 7p

مصطلحات موضوعية: FIELD theory (Physics), SILICON, SUBSTRATES (Materials science), ELECTRIC breakdown, MODULATION-doped field-effect transistors, GALLIUM nitride, ALUMINUM nitride

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