المؤلفون: Jiang, Wei¹ (AUTHOR), Wang, Mingxiang¹ (AUTHOR) mingxiang_wang@suda.edu.cn, Wang, Huaisheng¹ (AUTHOR), Zhang, Dongli¹ (AUTHOR)

المصدر: IEEE Transactions on Electron Devices. May2019, Vol. 66 Issue 5, p2214-2218. 5p.

مصطلحات موضوعية: BENDING stresses, INDIUM gallium zinc oxide, THIN film transistors, THRESHOLD voltage

المؤلفون: Zheng, Yu-Zhe, Chen, Po-Hsun, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhou, Kuan-Ju, Tu, Yu-Fa, Wang, Yu-Xuan, Wu, Chia-Chuan, Chen, Yu-An, Sun, Pei-Jun, Chen, Juan-Jie, Tu, Hong-Yi, Hung, Yang-Hao, Lin, Yu-Shan, Ciou, Fong-Min, Shih, Yu-Shan, Huang, Hui-Chun

المصدر: IEEE Transactions on Electron Devices; May2022, Vol. 69 Issue 5, p2423-2429, 7p

مصطلحات موضوعية: POLYCRYSTALLINE silicon, THIN film transistors, BENDING stresses, SILICON films, GAS flow, X-ray spectroscopy, STRAINS & stresses (Mechanics)

المؤلفون: Lee, Myung Keun, Kim, Choong-Ki, Park, Jeong Woo, Kim, Eungtaek, Seol, Myeong-Lok, Park, Jun-Young, Choi, Yang-Kyu, Park, Sang-Hee Ko, Choi, Kyung Cheol

المصدر: IEEE Transactions on Electron Devices; Aug2017, Vol. 64 Issue 8, p3189-3192, 4p

مصطلحات موضوعية: AMORPHOUS substances, THIN film transistors, DEFORMATIONS (Mechanics), HEAT treatment, BENDING stresses

المؤلفون: Tripathi, Ashutosh Kumar, Myny, Kris, Hou, Bo, Wezenberg, Kimberley, Gelinck, Gerwin H.

المصدر: IEEE Transactions on Electron Devices; Dec2015, Vol. 62 Issue 12, p4063-4068, 6p

مصطلحات موضوعية: INDIUM gallium zinc oxide, TRANSPONDERS, THIN film transistors, MECHANICAL properties of metals, BENDING stresses, INTEGRATED circuit design