We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination and carrier leakage are highly associated with the poor thermal stability. The existence of Auger recombination and carrier leakage is identified by the m-power method. A modified ABC model with an additional term f ( n ) related to carrier leakage is employed to analyze the evolution of multiple recombination mechanisms. The SRH process strongly suppresses both Auger recombination and carrier leakage at low currents. At high currents, the latter two processes are responsible for the efficiency droop and exhibit an anti-correlation upon temperature.
