التفاصيل البيبلوغرافية
| العنوان: |
A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET. |
| المؤلفون: |
Habibpour, Omid, He, Zhongxia Simon, Strupinski, Wlodek, Rorsman, Niklas, Ciuk, Tymoteusz, Ciepielewski, Pawel, Zirath, Herbert |
| المصدر: |
IEEE Microwave & Wireless Components Letters; Feb2017, Vol. 27 Issue 2, p168-170, 3p |
| مستخلص: |
This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup. [ABSTRACT FROM PUBLISHER] |
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| قاعدة البيانات: |
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