المؤلفون: Yue Hao, Ying Wang, Lingling Sun, Jun Liu, Jun-Peng Fang

المصدر: IEEE Electron Device Letters. 38:1067-1070

مصطلحات موضوعية: 010302 applied physics, Engineering, business.industry, Transistor, 020206 networking & telecommunications, 02 engineering and technology, Radiation, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Electric field, Logic gate, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Figure of merit, Breakdown voltage, Electrical and Electronic Engineering, business, Current density, Microwave

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::cf5aaa1f59fa4d3f3a0954559f43e68eTest
https://doi.org/10.1109/led.2017.2718538Test

المؤلفون: Peng Fang, Chenming Hu, Jiang Tao, J. Chen

المصدر: IEEE Electron Device Letters. 19:216-218

مصطلحات موضوعية: Materials science, Reliability (semiconductor), business.industry, MOSFET, Electrical engineering, Carrier lifetime, Electrical and Electronic Engineering, business, Electronic, Optical and Magnetic Materials, Power (physics)

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::e9f576ea9f508b3b1969deacb4dea9a5Test
https://doi.org/10.1109/55.701421Test

المؤلفون: Chenming Hu, Kai Chen, M. Song, Peng Fang, Ming-Ren Lin, A. Gupta, Donald L. Wollesen

المصدر: IEEE Electron Device Letters. 18:580-582

مصطلحات موضوعية: Materials science, business.industry, Polysilicon depletion effect, Transistor, Equivalent oxide thickness, Time-dependent gate oxide breakdown, Electronic, Optical and Magnetic Materials, law.invention, CMOS, Gate oxide, law, MOSFET, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, business, Metal gate

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::88a7faf49ab7bf862419c690d4733e60Test
https://doi.org/10.1109/55.644077Test

المؤلفون: Peng Fang, Hao Fang, John T. Yue

المصدر: IEEE Electron Device Letters. 15:463-465

مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Semiconductor device, Electronic, Optical and Magnetic Materials, Reverse leakage current, P channel, MOSFET, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Leakage (electronics), Voltage

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::640203699330f65a4a06da842f49a22dTest
https://doi.org/10.1109/55.334668Test

المؤلفون: R. Rakkhit, F. Heiler, R. Lee, Ming-Ren Lin, Peng Fang, L. Shen

المصدر: IEEE Electron Device Letters. 15:25-27

مصطلحات موضوعية: Materials science, Plasma etching, business.industry, Transistor, Electrical engineering, chemistry.chemical_element, Integrated circuit, equipment and supplies, Electronic, Optical and Magnetic Materials, law.invention, chemistry, law, Aluminium, Gate oxide, Etching, Optoelectronics, Wafer, Electrical and Electronic Engineering, Reactive-ion etching, business, human activities

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::97d8056f23e27f204fb96faa9f99d995Test
https://doi.org/10.1109/55.289473Test

المؤلفون: K.K. Hung, P.K. Ko, Peng Fang, Chenming Hu

المصدر: IEEE Electron Device Letters. 12:273-275

مصطلحات موضوعية: Chemistry, Time constant, Analytical chemistry, Valence band, Field-effect transistor, Electrical and Electronic Engineering, Acceptor, Hot electron, Molecular physics, Conduction band, Signal, Noise (radio), Electronic, Optical and Magnetic Materials

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b99ac10e89c6773242c958ef80d9d9b6Test
https://doi.org/10.1109/55.82058Test

المؤلفون: Chen, J.F., Jiang Tao, Peng Fang, Chenming Hu

المصدر: IEEE Electron Device Letters; 1998, Vol. 19 Issue 7, p216-218, 3p

المؤلفون: Gupta, A., Peng Fang, Song, M., Ming-Ren Lin, Wollesen, D., Chen, K., Hu, C.

المصدر: IEEE Electron Device Letters; 1997, Vol. 18 Issue 12, p580-582, 3p

المؤلفون: Kai Chen, Chenming Hu, Peng Fang, Gupta, A.

المصدر: IEEE Electron Device Letters; 1997, Vol. 18 Issue 6, p275-277, 3p

المؤلفون: Hao Fang, Peng Fang, Yue, J.T.

المصدر: IEEE Electron Device Letters; 1994, Vol. 15 Issue 11, p463-465, 3p