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1
المؤلفون: Bin Lu, Yan Cui, Zhijun Lv, Hongliang Lu
المصدر: IEEE Electron Device Letters. 40:1996-1999
مصطلحات موضوعية: 010302 applied physics, Physics, NQS, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, Logic gate, 0103 physical sciences, Statistical physics, Transient (oscillation), Electrical and Electronic Engineering, Quantum tunnelling, Quasistatic process, Electronic circuit, Communication channel
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b1c54ac45a707d5800f4238330477815Test
https://doi.org/10.1109/led.2019.2949599Test -
2
المؤلفون: Prashant Sonar, Ananth Dodabalapur, Tae-Jun Ha
المصدر: IEEE Electron Device Letters. 33:899-901
مصطلحات موضوعية: chemistry.chemical_classification, Electron mobility, Materials science, business.industry, Transistor, Electrical engineering, NQS, Polymer, Dual gate, Electronic, Optical and Magnetic Materials, law.invention, chemistry, law, Thin-film transistor, Logic gate, Optoelectronics, Charge carrier, Electrical and Electronic Engineering, business, Hardware_LOGICDESIGN
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::236d048d910da7207194e5cafe538ee7Test
https://doi.org/10.1109/led.2012.2190034Test -
3دورية أكاديمية
المؤلفون: Ha, Tae-Jun, Sonar, Prashant, Dodabalapur, Ananth
المصدر: IEEE Electron Device Letters
مصطلحات موضوعية: Carrier mobility, Charge-carrier transport, Charge-carrier velocity, Device performance, Effective mobilities, High mobility, Low-velocity, Non quasi static, Polymeric films, Thin film transistors, Time domain measurement, Velocity distribution, dual-gate configuration, nonquasi-static (NQS) measurements, polymer thin-film transistors (PTFTs), velocity distributions
العلاقة: Ha, Tae-Jun, Sonar, Prashant, & Dodabalapur, Ananth (2012) Charge-carrier velocity distributions in high-mobility polymer dual-gate thin-film transistors. IEEE Electron Device Letters, 33(6), pp. 899-901.; https://eprints.qut.edu.au/75214Test/; Science & Engineering Faculty
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4
المؤلفون: Allen Fai Lun Ng, Ping Keung Ko, Mansun Chan
المصدر: IEEE Electron Device Letters. 23:37-39
مصطلحات موضوعية: Physics, Transistor, NQS, Observable, Unity gain, Frequency dependence, Electronic, Optical and Magnetic Materials, law.invention, Computational physics, law, Control theory, MOSFET, Sine, Electrical and Electronic Engineering, Quasistatic process
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::99fc83fbe4a34d82e33b5435ab24a3d9Test
https://doi.org/10.1109/55.974805Test -
5
المؤلفون: Jerry G. Fossum, S. Veeraraghavan
المصدر: IEEE Electron Device Letters. 7:652-654
مصطلحات موضوعية: Physics, Bipolar junction transistor, Spice, Transistor, NQS, Topology, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, Control theory, law, Equivalent circuit, Transient (oscillation), Electrical and Electronic Engineering, Voltage
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::12cee5eb3e5320fcfe8f0be2b0c75936Test
https://doi.org/10.1109/edl.1986.26508Test