المؤلفون: Yearn-Ik Choi, Byeong-Hoon Lee, Doo-Young Kim, Dae-Seok Byeon, Min-Koo Han

المصدر: IEEE Electron Device Letters. 19:493-495

مصطلحات موضوعية: Gate turn-off thyristor, Materials science, business.industry, Base (geometry), Electrical engineering, Thyristor, MOS-controlled thyristor, Electronic, Optical and Magnetic Materials, law.invention, Integrated gate-commutated thyristor, Static induction thyristor, law, Optoelectronics, New device, Electrical and Electronic Engineering, business

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::803c9bb4a0c020d73420cefc700b59efTest
https://doi.org/10.1109/55.735757Test

المؤلفون: Dae-Seok Byeon, Byeong-Hoon Lee, Doo-Young Kim, Min-Koo Han, Yearn-Ik Choi

المصدر: IEEE Electron Device Letters; 1998, Vol. 19 Issue 12, p493-495, 3p