التفاصيل البيبلوغرافية
| العنوان: |
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates. |
| المؤلفون: |
Moon, J. S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P. M., Jernigan, G., Tedesco, J. L., VanMil, B., Myers-Ward, R., Eddy, Jr., C., Gaskill, D. K. |
| المصدر: |
IEEE Electron Device Letters; Jun2009, Vol. 30 Issue 6, p650-652, 3p, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
GRAPHENE, POLYCYCLIC aromatic hydrocarbons, FIELD-effect transistors, TRANSISTORS, RADIO frequency, SEMICONDUCTORS, SEMICONDUCTOR industry |
| مستخلص: |
We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect transistors (FETs), where the epitaxial-graphene layer is formed by graphitization of 2-in-diameter Si-face semi-insulating 6H-SiC (0001) substrates. The gate is processed with a metal gate on top of a high-k Al2O3 gate dielectric deposited via an atomic-layer-deposition method. With a gate length (Lg) of 2 μm and an extrinsic transconductance of 148 mS/mm, the extrinsic current-gain cutoff frequency (fμ) is measured as 4.4 GHz, yielding an extrinsic fT . Lg of 8.8 GHz · μm. This is comparable to that of Si NMOS. With graphene FETs fabricated in a layout similar to those of Si n-MOSFETs, ON-state current density increases dramatically to as high as 1.18 A/mm at Vds 1 V and 3 A/mm at Vds = 5 V. The current drive level is the highest ever observed in any semiconductor FETs. [ABSTRACT FROM AUTHOR] |
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