التفاصيل البيبلوغرافية
| العنوان: |
Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity. |
| المؤلفون: |
Yu Dong1, Jianxing Xu2, Guanglong Wang1, Haiqiao Ni2 hqni@semi.ac.cn, Kangming Pei2, Jianhui Chen1, Fengqi Gao1, Baochen Li1, Zhichuan Niu2 |
| المصدر: |
Electronics Letters (Wiley-Blackwell). 8/20/2015, Vol. 51 Issue 17, p1355-1356. 2p. 2 Diagrams, 2 Graphs. |
| مصطلحات موضوعية: |
RESONANT tunneling, PHOTODETECTORS, NEAR infrared radiation, WAVELENGTHS, RESPONSIVITY (Detectors) |
| مستخلص: |
Resonant tunnelling diode photodetectors with a 600 nm In0.53Ga0.47As absorption layer were fabricated by molecular beam epitaxy. The current–voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 105 A/W at 77 K and 1.92 × 104 A/W at room temperature under incident light with a power of 3.1 nW. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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