In this paper, a detailed simulation study of the channel thickness on the relocation valleys in double gate germanium and silicon MOSFETs with alternative wafer orientation is presented. Quantum simulation is performed based on self-consistent solutions of 2D Poisson’s equation and Schrodinger equation with a generalized effective mass approach, within the non-equilibrium Green’s function formalism. The effects channel thickness on the relocation of valleys are studied by focusing on the maximum subband potential, subband occupancy, subthreshold swing and on current for alternative wafer orientation. The results illustrate that the channel thickness supplants the valleys and their occupations that lead to different value of on current for every wafer orientation.
