التفاصيل البيبلوغرافية
| العنوان: |
Investigation of abnormally high growth-per-cycle in atomic layer deposition of Al2O3 using trimethylaluminum and water. |
| المؤلفون: |
Ham, So-Yeon1 (AUTHOR), Jin, Zhenyu1 (AUTHOR), Shin, Seokhee1 (AUTHOR), Kim, Minseo1 (AUTHOR), Seo, Mingyu1 (AUTHOR), Min, Yo-Sep1 (AUTHOR) ysmin@konkuk.ac.kr |
| المصدر: |
Applied Surface Science. Jan2022, Vol. 571, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*ATOMIC layer deposition, *WATER use, *THICK films, *THIN films, *POLYWATER |
| مستخلص: |
[Display omitted] • Abnormally high GPC was observed in Al 2 O 3 ALD using trimethylaluminum and water by modified processes. • In the modified ALD processes, TMA exposure time was split while keeping water exposure time constant. • The abnormally high GPC was observed only at low temperatures (80 and 150 °C), but not at high temperatures (250 °C). • The abnormally high GPC is due to a cooperative effect of the dimeric nature of TMA and residual H 2 O. • The cooperative effect is supported by observations of OH– and O-containing dimeric aggregates by QMS. Atomic layer deposition (ALD) has the excellent advantage of precisely controlling the thickness of thin films at the atomic scale owing to the self-limiting chemisorption of precursors, but its low growth-per-cycle (GPC) is a weakness in applications requiring thick films. Under the saturation process conditions for the self-limiting growth behavior in Al 2 O 3 ALD using trimethylaluminum (TMA) and H 2 O, the GPC values are limited to approximately 1–1.2 Å/cycle in the temperature range of 80–250 °C. However, in the practical use of the Al 2 O 3 ALD, abnormally high GPC often occurs, which is generally regarded as the failure to control saturation conditions such as insufficient water purge. Based on comparisons of the normal ALD processes and various modified ALD processes with abnormally high GPC, we report that the unusually high GPC in the Al 2 O 3 ALD is not only caused by the residual H 2 O but also due to the dimeric nature of TMA. Dimeric aggregate fragments of TMA and dimethylaluminum hydroxide were identified by quadrupole mass spectrometry during TMA exposure and Ar purge steps. This observation supports the dimeric interaction of TMA with the residual H 2 O. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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