التفاصيل البيبلوغرافية
| العنوان: |
Impact of SiGe source/drain induced-compressive strain on low frequency noise in high-k/metal gate p-channel metal-oxide-semiconductor transistors. |
| المؤلفون: |
Lein Wu, San1, Tsai, Kai-Shiang1, Cheng, Osbert2 |
| المصدر: |
Applied Physics Letters. 10/28/2013, Vol. 103 Issue 18, p183508. 3p. 4 Graphs. |
| مصطلحات موضوعية: |
*SILICON germanium integrated circuits, *ELECTRONIC noise, *METAL oxide semiconductor field-effect transistors, *BURST noise, *QUANTUM tunneling |
| مستخلص: |
In this paper, the properties of dielectric traps induced by SiGe source/drain (SiGe S/D) induced-compressive stress in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors are demonstrated using random telegraph noise (RTN) and 1/f noise analysis. The correlation between RTN and the 1/f noise parameters is presented. Compared with the control devices, the SiGe S/D HK/MG devices show trap positions that are closer to the SiO2 interfacial layer/Si channel, corresponding to a reduced average tunneling attenuation length (λ), and dominate the lower 1/f noise power spectrum. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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