المؤلفون: Si-Chen Lee, Wei Lun Huang, Hui Hsin Hsiao, Ming Ru Tang

المصدر: Applied Physics Letters. 109:063107

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Finite-difference time-domain method, Physics::Optics, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, Standing wave, Wavelength, Optics, Dispersion relation, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Refractive index, Plasmon, Localized surface plasmon

الوصف: This paper presents a triple-wavelength infrared plasmonic thermal emitter using a periodic arrangement of hybrid dielectric materials within a tri-layer metal/dielectric/metal structure. The proposed arrangement makes it possible to sustain multiple resonance of localized surface plasmons (LSP), thereby providing an additional degree of freedom by which to vary the resonant wavelengths in the medium infrared region. Variations in the effective refractive index due to the different modal distribution within dielectric gratings results in multiple LSP resonances, and the resonant wavelengths can be easily tuned by altering the compositions of hybrid dielectric materials. The measured dispersion relation diagram and the finite difference time domain simulation indicated that the resonances were localized. They also indicate that the magnetic fields generated by the multiple LSP modes exhibit distribution patterns similar to that of a standing wave in the periodic arrangement of the hybrid dielectric layer, each of which presents an emission peak corresponding to a different modal order.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::8548bb7b1a342a31ee0a6bed17fed6d1Test
https://doi.org/10.1063/1.4960664Test

المؤلفون: Si-Chen Lee, Shih-Yen Lin, Yao-Jen Tsai

المصدر: Applied Physics Letters. 83:752-754

مصطلحات موضوعية: Photocurrent, Photoluminescence, Physics and Astronomy (miscellaneous), business.industry, Photoconductivity, Photodetector, Gallium arsenide, Barrier layer, Responsivity, chemistry.chemical_compound, chemistry, Quantum dot, Optoelectronics, business

الوصف: A ten-stacked self-assembled InAs/GaAs quantum dot (QD) infrared photodetector is investigated. A wide detection window of 2–10 μm is observed with a peak responsivity of 187 mA/W at 7 μm under an applied voltage of 1.1 V. The observed negative differential conductance (NDC) of the photocurrent at low temperature is attributed to the formation of high-field domains and the resultant intervalley scattering in the GaAs barrier layer. The disappearance of the NDC and the increase of single-QD photoluminescence intensity with increasing temperature below 100 K are attributed to the thermally assisted electron redistribution with increasing temperature.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::80ffa8585809e2efef5e38ce8ad82104Test
https://doi.org/10.1063/1.1594285Test

المؤلفون: Shih-Yen Lin, Yau-Ren Tsai, Si-Chen Lee

المصدر: Applied Physics Letters. 78:2784-2786

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Infrared, business.industry, Blocking (radio), Infrared spectroscopy, Photodetector, Specific detectivity, Gallium arsenide, Responsivity, chemistry.chemical_compound, Optics, chemistry, Quantum dot, Optoelectronics, business

الوصف: Ten-stacked InAs/GaAs quantum-dot infrared photodetectors with single Al0.3Ga0.7As blocking layers at either side of the stacked dots are investigated. With peak responsivity 214 mA/W and specific detectivity 1.17×1010 cm Hz1/2/W at 6 μm, quantum-dot infrared photodetectors with single-sided blocking layers are superior in responsivity with compatible detectivity as compared to those without blocking layers. Enhancement of the photoelectron avalanche process and the absence of negative differential conductance are observed. The devices exhibit two different infrared absorption regions at 2–6 and 6–10 μm, which indicates a wide detection window of the device.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::9403eacf82d96cbbc4d24a3f363e68f9Test
https://doi.org/10.1063/1.1365950Test

المؤلفون: Si-Chen Lee, Shiang-Feng Tang, Shih-Yen Lin

المصدر: Applied Physics Letters. 78:2428-2430

مصطلحات موضوعية: Range (particle radiation), Materials science, Physics and Astronomy (miscellaneous), business.industry, Infrared, Photoconductivity, Bolometer, Photodetector, law.invention, Gallium arsenide, chemistry.chemical_compound, Optics, Key factors, chemistry, law, Quantum dot, Optoelectronics, business

الوصف: A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5–7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (⩾250 K) was demonstrated. The specific peak detectivity D* is 2.4×108 cm Hz1/2/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::14397b90af10ce5558bb37e233819618Test
https://doi.org/10.1063/1.1362201Test

المؤلفون: An Shih, Chih Ta Chia, Si-Chen Lee

المصدر: Applied Physics Letters. 74:3347-3349

مصطلحات موضوعية: Coupling, Amorphous silicon, Materials science, Physics and Astronomy (miscellaneous), Silicon, Hydrogen, Phonon, Analytical chemistry, chemistry.chemical_element, Molecular physics, Vibration, Condensed Matter::Materials Science, symbols.namesake, chemistry.chemical_compound, chemistry, Deuterium, symbols, Physics::Atomic Physics, Raman spectroscopy

الوصف: The Raman spectra of hydrogenated and deuterated amorphous silicon films (a-Si:H, a-Si:D) have been investigated. It is suggested that the asymmetrical broadening of the transverse-optical (TO) Raman peak of a-Si:D compared to the TO Raman peak of a-Si:H results from the coupling between the Si–D wagging mode and the Si–Si TO phonon mode rather than the structural difference.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::b881e8f10aff9eb8dcd7b069e1c878c5Test
https://doi.org/10.1063/1.123340Test

المؤلفون: Shih-Yen Lin, Si-Chen Lee, Cheng-Hung Wang, Chi Chen, Chen-Fung Su, Chung-En Chang, Meng-Yu Lin

المصدر: Applied Physics Letters. 105:073501

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Graphene, law, Sapphire, Nanotechnology, Chemical vapor deposition, Thin film, Epitaxy, High-resolution transmission electron microscopy, Graphene nanoribbons, law.invention, Graphene oxide paper

الوصف: Uniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS2/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS2/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS2/graphene are achieved by CVD fabrication of graphene layers on top of the MoS2, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::c66f011cc3f3e7a248e9d8d8687ab37bTest
https://doi.org/10.1063/1.4893448Test

المؤلفون: Ming-Shyan Sun, Jeng-Hua Wei, Si-Chen Lee

المصدر: Applied Physics Letters. 71:1498-1500

مصطلحات موضوعية: Amorphous silicon, Quantitative Biology::Biomolecules, Materials science, Physics and Astronomy (miscellaneous), Silicon, Hydrogen, Photoconductivity, Dangling bond, chemistry.chemical_element, Electron, Condensed Matter::Materials Science, chemistry.chemical_compound, Deuterium, chemistry, Chemical physics, Atomic physics, Astrophysics::Galaxy Astrophysics, Staebler–Wronski effect

الوصف: We have studied light-induced photoconductivity degradation in an intrinsic hydrogenated and deuterated amorphous-silicon (a-Si) alloy. Deuterated a-Si turns out to be more stable under light exposure. A possible mechanism is proposed to explain this phenomenon. It is attributed to the highly efficient coupling between the localized Si–D wagging modes (∼510 cm−1) and the extended Si–Si lattice vibration modes (∼495 cm−1). The energy released from electron or hole capture at silicon dangling bonds causes localized vibrations of nearby Si–D bonds. The energy dissipates quickly to the background lattice and a higher recombination rate at local sites is needed in deuterated a-Si than in hydrogenated amorphous silicon to accumulate enough energy to break the nearby weak bonds.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::f9717757285630c53988ca8bf8bd4562Test
https://doi.org/10.1063/1.119972Test

المؤلفون: Wei-Lun Huang, Hui-Hsin Hsiao, Ming-Ru Tang, Si-Chen Lee

المصدر: Applied Physics Letters; 8/8/2016, Vol. 109 Issue 6, p063107-1-063107-5, 5p, 1 Diagram, 1 Chart, 6 Graphs

مصطلحات موضوعية: DIELECTRIC materials, SURFACE plasmons, REFRACTIVE index, DIELECTRICS, MAGNETIC fields, POLLUTANTS

مستخلص: This paper presents a triple-wavelength infrared plasmonic thermal emitter using a periodic arrangement of hybrid dielectric materials within a tri-layer metal/dielectric/metal structure. The proposed arrangement makes it possible to sustain multiple resonance of localized surface plasmons (LSP), thereby providing an additional degree of freedom by which to vary the resonant wavelengths in the medium infrared region. Variations in the effective refractive index due to the different modal distribution within dielectric gratings results in multiple LSP resonances, and the resonant wavelengths can be easily tuned by altering the compositions of hybrid dielectric materials. The measured dispersion relation diagram and the finite difference time domain simulation indicated that the resonances were localized. They also indicate that the magnetic fields generated by the multiple LSP modes exhibit distribution patterns similar to that of a standing wave in the periodic arrangement of the hybrid dielectric layer, each of which presents an emission peak corresponding to a different modal order. [ABSTRACT FROM AUTHOR]

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المؤلفون: Da, Zhang, Xingdong, Gao, Si, Chen, Hans, Norström, Ulf, Smith, Paul, Solomon, Shili, Zhang, Zhen, Zhang

المصدر: Applied Physics Letters.

وصف الملف: print

الوصول الحر: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-235235Test

المؤلفون: Chi‐Huei Lin, Si-Chen Lee, Wen‐Shiang Liao

المصدر: Applied Physics Letters. 65:2229-2231

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Absorption spectroscopy, Inorganic chemistry, Oxide, Infrared spectroscopy, Chemical vapor deposition, Nitride, chemistry.chemical_compound, chemistry, Silicon nitride, Chemical engineering, Plasma-enhanced chemical vapor deposition, Deposition (phase transition)

الوصف: Hydrogenated amorphous silicon nitride (a‐SiNx:H) films have been fabricated by plasma‐enhanced chemical vapor deposition at temperatures ranging from 50 to 250 °C. It is found that as soon as the samples are taken out from the reaction chamber and exposed to the atmosphere, the a‐SiNx:H films start to oxide. The oxidation processes are monitored using infrared absorption spectroscopy. A model of porous ‘‘fractal‐like network’’ structure, which is probably inherent in low‐temperature deposition, is proposed to explain why moisture (H2O) in the air can percolate through numerous microvoids into these films. The H2O molecules which percolate into these porous films are active to react with the —Si—N—Si—, —Si—N—H, and —N—Si—‐H bonds and to form more chemically stabilized —Si—O—Si—, —Si—O—H, and H—O—H bond configurations with the result of eventual oxidization of the entire nitride films.

الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::40c24a0eae8b45bc640b78ae1995f05dTest
https://doi.org/10.1063/1.112772Test