دورية أكاديمية

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators.

التفاصيل البيبلوغرافية
العنوان: Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators.
المؤلفون: Faucher, Marc, Grimbert, Bertrand, Cordier, Yvon, Baron, Nicolas, Wilk, Arnaud, Lahreche, Hacène, Bove, Philippe, François, Marc, Tilmant, Pascal, Gehin, Thomas, Legrand, Christiane, Werquin, Matthieu, Buchaillot, Lionel, Gaquière, Christophe, Théron, Didier
المصدر: Applied Physics Letters; 6/8/2009, Vol. 94 Issue 23, p233506, 3p, 1 Diagram, 3 Graphs
مصطلحات موضوعية: PIEZOELECTRIC transducers, GALLIUM nitride, ELECTROMECHANICAL devices, ELECTRIC resonators, PIEZOELECTRIC semiconductors, ELECTRICAL properties of electron gas, MODULATION-doped field-effect transistors
مستخلص: A fully integrated electromechanical resonator is described that is based on high mobility piezoelectric semiconductors for actuation and detection of nanoscale motion. We employ the two-dimensional electron gas present at an AlGaN/GaN interface and the piezoelectric properties of this heterostructure to demonstrate a resonant high-electron-mobility transistor enabling the detection of strain variation. In this device, we take advantage of the polarization field divergence originated by mechanical flexural modes for generating piezoelectric doping. This enables a modulation of carrier density which results in a large current flow and thus constitutes a motion detector with intrinsic amplification. [ABSTRACT FROM AUTHOR]
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قاعدة البيانات: Complementary Index
الوصف
تدمد:00036951
DOI:10.1063/1.3153504