التفاصيل البيبلوغرافية
| العنوان: |
Homologous temperature dependence of global surface scaling behaviors of polycrystalline copper films. |
| المؤلفون: |
Yang, J. J., Liu, B., Wang, Y., Xu, K. W. |
| المصدر: |
Applied Physics Letters; 11/9/2009, Vol. 95 Issue 19, p194104, 3p, 1 Diagram, 3 Graphs |
| مصطلحات موضوعية: |
SURFACES (Technology), POLYCRYSTALLINE semiconductors, SOLID state electronics, THIN films, SEMICONDUCTOR doping |
| مستخلص: |
A strategy integrating structure zone model with dynamic scaling theory was proposed to study the global surface dynamics of polycrystalline Cu films deposited at different homologous temperature Ts/Tm. The evolution of roughness exponent α and growth exponent β reveals a transition from random deposition to surface diffusion dominated smoothening in the lower Ts/Tm regime and then to rapid surface roughening in the higher Ts/Tm regime. In contrast to that of amorphous films, the distinct scaling behavior in higher Ts/Tm regime arises from the change of anisotropic mass transport mechanisms, which could be related to the texture evolution during growth. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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