التفاصيل البيبلوغرافية
| العنوان: |
Low temperature direct wafer bonding of GaAs to Si via plasma activation. |
| المؤلفون: |
Yeo, C. Y.1, Xu, D. W.1, Yoon, S. F.1, Fitzgerald, E. A.2 |
| المصدر: |
Applied Physics Letters. 2/4/2013, Vol. 102 Issue 5, p054107. 4p. 1 Black and White Photograph, 4 Charts, 2 Graphs. |
| مصطلحات موضوعية: |
*GALLIUM arsenide, *SILICON wafers, *OPTOELECTRONICS, *ARGON plasmas, *BOND energy (Chemistry) |
| مستخلص: |
The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions of 30 s, 120 mTorr, and 200 W, followed by low temperature annealing at 140 °C, and was 478 mJ/m2. Through this process, a processed silicon integrated circuit could be integrated with optoelectronics gallium arsenide on a wafer scale. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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