التفاصيل البيبلوغرافية
| العنوان: |
Strain effects on exciton resonance energies of ZnO epitaxial layers. |
| المؤلفون: |
Makino, T., Yasuda, T., Segawa, Y., Ohtomo, A., Tamura, K., Kawasaki, M., Koinuma, H. |
| المصدر: |
Applied Physics Letters; 8/27/2001, Vol. 79 Issue 9, p1282, 3p, 1 Chart, 4 Graphs |
| مصطلحات موضوعية: |
ZINC oxide, EPITAXY, EXCITON theory, ELECTRONIC materials |
| مستخلص: |
Magnitudes of strain in ZnO epitaxial layers grown on sapphire(0001) substrates under various growth conditions were experimentally determined by x-ray diffraction. We discuss the strain-induced energy shift on the exciton resonances, the results of which were analyzed theoretically using the Hamiltonian for the valence bands under in-plain biaxial strain. Comparative studies with GaN evidenced the advantages of ZnO in terms of sensitivity of the strain-induced energy shift and of piezoelectric effect in heterostructures. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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