التفاصيل البيبلوغرافية
| العنوان: |
High switching endurance in TaOx memristive devices. |
| المؤلفون: |
Yang, J. Joshua, Zhang, M.-X., Strachan, John Paul, Miao, Feng, Pickett, Matthew D., Kelley, Ronald D., Medeiros-Ribeiro, G., Williams, R. Stanley |
| المصدر: |
Applied Physics Letters; 12/6/2010, Vol. 97 Issue 23, p232102, 3p |
| مصطلحات موضوعية: |
TITANIUM dioxide, SWITCHING circuits, METALLIC oxides, THERMODYNAMICS, CHEMICAL kinetics, SOLID state physics, ELECTRIC resistors |
| مستخلص: |
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
