التفاصيل البيبلوغرافية
| العنوان: |
Evidence of atomically resolved 6×6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition. |
| المؤلفون: |
Hu, T. W., Ma, F., Ma, D. Y., Yang, D., Liu, X. T., Xu, K. W., Chu, Paul K. |
| المصدر: |
Applied Physics Letters; 4/29/2013, Vol. 102 Issue 17, p171910, 4p, 2 Color Photographs, 1 Graph |
| مصطلحات موضوعية: |
ELECTRIC properties of graphene, BUFFER layers, SHORT-range order (Magnetic structure), SCANNING tunneling microscopy, CHEMICAL decomposition |
| مستخلص: |
Scanning tunneling microscopy (STM) is performed to study the formation mechanism of graphene on 6H-SiC by thermal decomposition in situ and the evolution of an atomically resolved 6×6 structure in the buffer layer is revealed. The long-range order of the 6×6 structure is maintained during growth, but the short-range arrangement changes with temperature. Based on STM images acquired at different voltages, a structure consisting of triangular silicon clusters with the 6×6 structure and filled by amorphous carbon atoms is proposed. The 6×6 silicon clusters serve as the template and amorphous carbon atoms provide the carbon source for graphene growth. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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