التفاصيل البيبلوغرافية
| العنوان: |
Engineering nonlinearity into memristors for passive crossbar applications. |
| المؤلفون: |
Joshua Yang, J., Zhang, M.-X., Pickett, Matthew D., Miao, Feng, Paul Strachan, John, Li, Wen-Di, Yi, Wei, Ohlberg, Douglas A. A., Joon Choi, Byung, Wu, Wei, Nickel, Janice H., Medeiros-Ribeiro, Gilberto, Stanley Williams, R. |
| المصدر: |
Applied Physics Letters; 3/12/2012, Vol. 100 Issue 11, p113501, 4p, 1 Color Photograph, 2 Graphs |
| مصطلحات موضوعية: |
NONLINEAR theories, CROSSBAR switches (Electronics), ELECTRIC resistance, HETEROSTRUCTURES, DIFFERENTIAL relays |
| مستخلص: |
Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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