دورية
Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes
| العنوان: | Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes |
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| المؤلفون: | Mao, Wei, Xu, Shihao, Wang, Haiyong, Yang, Cui, Zhao, Shenglei, Chen, Jiabo, Zhang, Yachao, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue |
| المصدر: | Applied Physics Express (APEX); January 2022, Vol. 15 Issue: 1 p016504-016504, 1p |
| مستخلص: | The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device treated by oxygen plasma has a relatively more inhomogeneous barrier height. |
| قاعدة البيانات: | Supplemental Index |
| تدمد: | 18820778 18820786 |
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| DOI: | 10.35848/1882-0786/ac44cb |