Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics
| العنوان: | Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics |
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| المؤلفون: | Tae-yil Eom, Chan-Mo Kang, Chee-Hong Ahn, Chiwon Kang, Yong-Hoon Kim, Hoo-Jeong Lee, Sunyoung Lee, Jun-gu Kang, Muhammad Saad Salman |
| المصدر: | Applied Physics Express. 11:061104 |
| بيانات النشر: | IOP Publishing, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Flash-lamp, Materials science, business.industry, Annealing (metallurgy), Transistor, General Engineering, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Nitrogen, law.invention, chemistry, X-ray photoelectron spectroscopy, law, Thin-film transistor, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business |
| الوصف: | In this study, we show the evolution of nitrogen defects during a sol–gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm2 V−1 s−1. However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration. |
| تدمد: | 1882-0786 1882-0778 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::adf9668b8d5dbf70f5259b2bf9ac3fddTest https://doi.org/10.7567/apex.11.061104Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........adf9668b8d5dbf70f5259b2bf9ac3fdd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18820786 18820778 |
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