Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates
| العنوان: | Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates |
|---|---|
| المؤلفون: | Hideto Miyake, Chia-Hung Lin, Yasuhiro Yamashita, Shinya Tamaki, Kazumasa Hiramatsu |
| المصدر: | Applied Physics Express. 9:081001 |
| بيانات النشر: | IOP Publishing, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Morphology (linguistics), Plane (geometry), General Engineering, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Layer thickness, Buffer (optical fiber), Crystallography, Crystallinity, 0103 physical sciences, Sapphire, Composite material, Facet, 0210 nano-technology, Layer (electronics) |
| الوصف: | 10-µm-thick a-plane AlN films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer. |
| تدمد: | 1882-0786 1882-0778 |
| الوصول الحر: | https://explore.openaire.eu/search/publication?articleId=doi_________::b5d3656583bfadc82502688cbfd5c5f6Test https://doi.org/10.7567/apex.9.081001Test |
| حقوق: | CLOSED |
| رقم الانضمام: | edsair.doi...........b5d3656583bfadc82502688cbfd5c5f6 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18820786 18820778 |
|---|