التفاصيل البيبلوغرافية
| العنوان: |
Analysis of Nickel Silicides by SIMS and LEAP. |
| المؤلفون: |
Ronsheim, Paul, McMurray, Jeff, Flaitz, Philip, Parks, Christopher, Thompson, Keith, Larson, David, Kelly, Thomas F. |
| المصدر: |
AIP Conference Proceedings; 9/26/2007, Vol. 931 Issue 1, p129-136, 8p, 4 Diagrams, 8 Graphs |
| مصطلحات موضوعية: |
SECONDARY ion mass spectrometry, SILICIDES, ANALYTICAL chemistry, ELECTRODES, METALLURGICAL segregation, SIMULATED annealing |
| مستخلص: |
Ni-silicides formed by a variety of processing techniques were studied with secondary ion mass spectroscopy (SIMS) and local electrode atom probe (LEAP®) analysis. SIMS provided 1-D chemical analysis over an approximately 60 micron diameter area. LEAP provided 3-D atom identities and locations over an approximately 100–150 nm diameter area. It was determined that the 200 °C drive-in anneal results in a Ni3Si2 phase, which is converted to NiSi at temperatures between 360 °C–400 °C. LEAP detects no As or Pt segregation after the 200 °C drive-in anneal, but did quantify As segregation of up to 7% of the material composition just inside the NiSi–Si interface after the phase-formation anneal. The presence of oxygen at the interface results in a silicide chemical surface roughness of up to 3.5 nm as compared to 0.5 nm with a clean, non-oxidized surface. Silicide stability was demonstrated over the phase-formation-temperature range of 360 °C–400 °C including when a second rapid thermal anneal step was used. LEAP analysis was also able to quantify the surface roughness of the interface as a function of anneal temperature and the non-uniform Pt and As distribution across the silicide surface as viewed in 2-D surface projection. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
