التفاصيل البيبلوغرافية
| العنوان: |
Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region. |
| المؤلفون: |
Papatryfonos, Konstantinos, Angelova, Todora, Brimont, Antoine, Reid, Barry, Guldin, Stefan, Smith, Peter Raymond, Tang, Mingchu, Li, Keshuang, Seeds, Alwyn J., Liu, Huiyun, Selviah, David R. |
| المصدر: |
AIP Advances; Feb2021, Vol. 11 Issue 2, p1-10, 10p |
| مصطلحات موضوعية: |
TERNARY alloys, REFRACTIVE index, MOLECULAR beam epitaxy, WAVELENGTHS |
| مستخلص: |
A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 µm and 1.55 µm, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys' precise compositions and bandgap values were confirmed using high-resolution x-ray diffraction and photoluminescence, to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1−x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure, which we present in detail. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |
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