التفاصيل البيبلوغرافية
| العنوان: |
Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K). |
| المؤلفون: |
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique |
| المصدر: |
AIP Advances; Feb2020, Vol. 10 Issue 2, p1-7, 7p |
| مصطلحات موضوعية: |
CRYOELECTRONICS, CURRENT-voltage curves, SPACE charge, MEMRISTORS, METAL-insulator transitions, HEAT, INVESTIGATIONS |
| مستخلص: |
Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature range of 300–1.5 K. The current–voltage curves exhibit negative differential resistance effects between 130 K and 1.5 K, attributed to a metal–insulator transition of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated with an ION/IOFF diode ratio of 84 at 1.5 K, paving the way for selector-free cryogenic passive crossbars. Temperature-dependent thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in a low resistance state, suggesting hopping-type conduction mechanisms. Finally, the transport mechanism analysis at 1.5 K indicates that for all resistance states, the conduction follows the space-charge limited current model in low fields, whereas trap-assisted tunneling dominates in higher fields. [ABSTRACT FROM AUTHOR] |
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