التفاصيل البيبلوغرافية
| العنوان: |
Non-thermal melting of tungsten under intense electronic excitations. |
| المؤلفون: |
Ye, X.B.1,2 (AUTHOR), He, Z.H.1,2,3 (AUTHOR), Gao, Fei4 (AUTHOR), Pan, B.C.1,2 (AUTHOR) bcpan@ustc.edu.cn |
| المصدر: |
Acta Materialia. Sep2021, Vol. 216, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*ELECTRONIC excitation, *MELTING points, *TUNGSTEN, *MELTING, *MOLECULAR dynamics |
| مستخلص: |
Non-thermal effect caused by ultrafast lasers and swift ions in materials are very intriguing, which is of both scientific interest and technological importance. However, the underlying physics of non-thermal effect on ultrafast process remains unclear and the proposed mechanisms have been controversial. Based on the perturbation approximation under tight-binding theory, the non-thermal effect on tungsten (W) are extensively studied. We demonstrate that the non-thermal effect stemmed from the intense electronic excitations induce dramatic decrease in the melting point of W crystal, as well as non-thermal melting inside the W slab. Our analysis shows that the non-thermal forces are essentially responsible for the drop of melting point of the bulk system. Remarkably, the non-thermal effect combined with surface effect on a W film enhance the ordering of the direction of atomic motion near the surface, preventing melting near the surface area, but leading to non-thermal melting in the interior area of the film. Our work also exhibits a unified relationship between the non-thermal melting and the interatomic forces. This relationship is universal in metals and semiconductors irradiated by ultrafast lasers or swift ions, and has been well established long before. Snapshots of the velocity along z direction (v z) of each atom in W (001) slab during the molecular dynamics simulations. Atoms are colored according to the magnitude and direction of (v z). [Display omitted] [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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