Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

التفاصيل البيبلوغرافية
العنوان: Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope
المؤلفون: SATOH, Nobuo, DOI, Atsushi, YAMAMOTO, Hidekazu
المصدر: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
بيانات النشر: IEEE
سنة النشر: 2020
نوع الوثيقة: conference object
اللغة: unknown
DOI: 10.1109/wipdaasia49671.2020.9360252
الإتاحة: https://doi.org/10.1109/wipdaasia49671.2020.9360252Test
http://xplorestaging.ieee.org/ielx7/9360228/9360248/09360252.pdf?arnumber=9360252Test
حقوق: https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.htmlTest ; https://doi.org/10.15223/policy-029Test ; https://doi.org/10.15223/policy-037Test
رقم الانضمام: edsbas.1AA79756
قاعدة البيانات: BASE
الوصف
DOI:10.1109/wipdaasia49671.2020.9360252