Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations.

التفاصيل البيبلوغرافية
العنوان: Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations.
المؤلفون: Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Seoane, Natalia, Indalecio, Guillermo, Lindberg, Jari, Dettmer, Wulf, Peric, Djordje, Garcia-Loureiro, Antonio J., Kalna, Karol
المصدر: 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p52-55, 4p
قاعدة البيانات: Complementary Index
الوصف
ردمك:9781467386098
DOI:10.1109/ULIS.2016.7440050