An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS

التفاصيل البيبلوغرافية
العنوان: An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS
المؤلفون: Shiju E, Christoph Scheytt, Yanfei Mao, Klaus Schmalz
المصدر: 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
بيانات النشر: IEEE, 2016.
سنة النشر: 2016
مصطلحات موضوعية: Computer science, business.industry, Amplifier, 020208 electrical & electronic engineering, Bandwidth (signal processing), Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Dissipation, BiCMOS, Inductive load, Balun, Transmission line, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, Voltage
الوصف: This paper presents a four stage all-transmission-line 220 GHz differential LNA in SiGe BiCMOS technology. Cascode topology is chosen for each stage. The amplifier takes advantage of microstrip transmission lines to realize the inductive load, Marshand balun, input, output, and inter-stage matching of the LNA. The LNA has a gain of 21 dB at 224 GHz, a 3 dB bandwidth of more than 6 GHz. It has a supply voltage of 3V and power dissipation of 234 mW. The amplifier is intended for the use in communication, security scanning, imaging and remote sensing at 220 GHz.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::2d9b9560fd24750d7737670cf140ab4cTest
https://doi.org/10.1109/rfit.2016.7578132Test
رقم الانضمام: edsair.doi...........2d9b9560fd24750d7737670cf140ab4c
قاعدة البيانات: OpenAIRE