التفاصيل البيبلوغرافية
| العنوان: |
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications |
| المؤلفون: |
Krishnan, S., Kwon, U., Moumen, N., Stoker, M.W., Harley, E.C.T., Bedell, S., Nair, D., Greene, B., Henson, W., Chowdhury, M., Prakash, D.P., Wu, E., Ioannou, D., Cartier, E., Na, M.-H., Inumiya, S., Mcstay, K., Edge, L., Iijima, R., Cai, J., Frank, M., Hargrove, M., Guo, D., Kerber, A., Jagannathan, H., Ando, T., Shepard, J., Siddiqui, S., Dai, M., Bu, H., Schaeffer, J., Jaeger, D., Barla, K., Wallner, T., Uchimura, S., Lee, Y., Karve, G., Zafar, S., Schepis, D., Wang, Y., Donaton, R., Saroop, S., Montanini, P., Liang, Y., Stathis, J., Carter, R., Pal, R., Paruchuri, V., Yamasaki, H., Lee, J-H. |
| المصدر: |
2011 International Electron Devices Meeting |
| بيانات النشر: |
IEEE |
| سنة النشر: |
2011 |
| نوع الوثيقة: |
conference object |
| اللغة: |
unknown |
| DOI: |
10.1109/iedm.2011.6131628 |
| الإتاحة: |
https://doi.org/10.1109/iedm.2011.6131628Test
http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131628.pdf?arnumber=6131628Test |
| رقم الانضمام: |
edsbas.5758065A |
| قاعدة البيانات: |
BASE |
