Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions.

التفاصيل البيبلوغرافية
العنوان: Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions.
المؤلفون: Rumyantsev, S.L., Levinshtein, M.E., Shur, M.S., Palmour, J.W., Agarwal, A.K., Das, M.K.
المصدر: 2011 21st International Conference on Noise & Fluctuations (ICNF); 2011, p100-101, 2p
قاعدة البيانات: Complementary Index
الوصف
ردمك:9781457701894
DOI:10.1109/ICNF.2011.5994272