مؤتمر
Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions.
العنوان: | Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions. |
---|---|
المؤلفون: | Rumyantsev, S.L., Levinshtein, M.E., Shur, M.S., Palmour, J.W., Agarwal, A.K., Das, M.K. |
المصدر: | 2011 21st International Conference on Noise & Fluctuations (ICNF); 2011, p100-101, 2p |
قاعدة البيانات: | Complementary Index |
ردمك: | 9781457701894 |
---|---|
DOI: | 10.1109/ICNF.2011.5994272 |