0.5 W High Linearity Power Amplifier for Broadband Wireless (3.3 ~ 3.9 GHz)

التفاصيل البيبلوغرافية
العنوان: 0.5 W High Linearity Power Amplifier for Broadband Wireless (3.3 ~ 3.9 GHz)
المؤلفون: Chin-Leong Lim
المصدر: 2007 Korea-Japan Microwave Conference.
بيانات النشر: IEEE, 2007.
سنة النشر: 2007
مصطلحات موضوعية: Power-added efficiency, Third order, Engineering, business.industry, Heterojunction bipolar transistor, Amplifier, Bandwidth (signal processing), Electrical engineering, Electronic engineering, Linearity, Gain compression, High-electron-mobility transistor, business
الوصف: This paper presents a 0.5 Watt amplifier that operates over the 3.3 ~ 3.9 GHz range. The target applications are pre-driver in base-stations and power amplifier in subscriber units. The design marries good Third Order Output Intercept Point (OIP3) and exceptional Power Added Efficiency (PAE) at IdB gain compression point (PldB). The performances are: -G = 11.8 dB, IRL & ORL < -8 dB, PldB = 28.5 dBm and OIP3 = 42.6 dBm. The superior performance is achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement mode pHEMT process. The device requires simple matching components to achieve wide bandwidth because of the built-in input pre-match. From the reliability standpoint, pHEMT devices are eminently suited to PA use -the drain to source resistance (RDSon) will inherently rise to counteract the thermal runaway that blights bipolar and HBT PAs. The internal bias circuit is temperature compensated and can be adjusted for either class A or class AB operation. The device is housed inside a standard 16 pin LPCC 3X3 package.
الوصول الحر: https://explore.openaire.eu/search/publication?articleId=doi_________::131afbfd067e66b9f567f7fcb2644693Test
https://doi.org/10.1109/kjmw.2007.4402227Test
رقم الانضمام: edsair.doi...........131afbfd067e66b9f567f7fcb2644693
قاعدة البيانات: OpenAIRE